TSM033NB04CR RLG

TSM033NB04CR RLG

Images are for reference only
See Product Specifications

TSM033NB04CR RLG
Описание:
MOSFET N-CH 40V 21A/121A 8PDFN
Упаковка:
Tape & Reel (TR)
Datasheet:
TSM033NB04CR RLG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TSM033NB04CR RLG
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:f89cef59a81faebf2778c9a8dee957a3
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:716442e2ccaa4b2e6bd2934e532ca917
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:d022c62db6fda99fc3b9e49937214f0e
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3cce4bd21511f7bee31c25c5f99871c8
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):65e0002c855f3fa8b8dcff0f2d54b648
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:85804fba97d67c7de29f828b662181f9
Package / Case:7f82de9f5c66f9f803bc2f6ee2b90c1b
In Stock: 3650
Stock:
3650 Can Ship Immediately
  • Делиться:
Для использования с
IRF6618TRPBF
IRF6618TRPBF
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
RF1K49156
RF1K49156
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
P3M06300T3
P3M06300T3
PN Junction Semiconductor
SICFET N-CH 650V 9A TO-220-3
FDP2532
FDP2532
onsemi
MOSFET N-CH 150V 8A/79A TO220-3
IPP65R190CFD7AAKSA1
IPP65R190CFD7AAKSA1
Infineon Technologies
MOSFET N-CH 650V 14A TO220-3
DMTH8008LPSQ-13
DMTH8008LPSQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
IRFI530N
IRFI530N
Infineon Technologies
MOSFET N-CH 100V 12A TO220AB FP
IRFU214
IRFU214
Vishay Siliconix
MOSFET N-CH 250V 2.2A TO251AA
SI5406DC-T1-E3
SI5406DC-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 6.9A 1206-8
PSMN5R8-30LL,115
PSMN5R8-30LL,115
NXP USA Inc.
MOSFET N-CH 30V 40A 8DFN
IPD60R520C6ATMA1
IPD60R520C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO252-3
IPP014N06NF2SAKMA2
IPP014N06NF2SAKMA2
Infineon Technologies
TRENCH 40<-<100V PG-TO220-3
Вас также может заинтересовать
1.5KE91CAHA0G
1.5KE91CAHA0G
Taiwan Semiconductor Corporation
TVS DIODE 77.8VWM 125VC DO201
P4KE160A B0G
P4KE160A B0G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO204AL
SA60CAHB0G
SA60CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 60VWM 96.8VC DO204AC
TS10P04GHC2G
TS10P04GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 10A TS-6P
1N4005G A0G
1N4005G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
SFF1606G
SFF1606G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AB
S1DLHRHG
S1DLHRHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
SFA804GHC0G
SFA804GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
S5J M6
S5J M6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
S4M R7
S4M R7
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
BZD27C51PHMQG
BZD27C51PHMQG
Taiwan Semiconductor Corporation
DIODE ZENER 51V 1W SUB SMA
BZX55B3V6 A0G
BZX55B3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35