TSM033NB04CR RLG

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See Product Specifications

Mfr. #:

TSM033NB04CR RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 40V 21A/121A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM033NB04CR RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM033NB04CR RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	f89cef59a81faebf2778c9a8dee957a3
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	716442e2ccaa4b2e6bd2934e532ca917
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	d022c62db6fda99fc3b9e49937214f0e
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3cce4bd21511f7bee31c25c5f99871c8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	65e0002c855f3fa8b8dcff0f2d54b648
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 3650

Stock:

3650 Can Ship Immediately