TSM060N03PQ33 RGG

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Mfr. #:

TSM060N03PQ33 RGG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 30V 62A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM060N03PQ33 RGG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM060N03PQ33 RGG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	e0097149d2494189a6dc8eebc0892f75
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e7ea1562c25d0de3f9f170a52af11df3
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	eeb335b20a9bbb7f9f7e4fb6ad034ac0
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	00afd37bd12f691ff317b50d9e977f66
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2aa0e4b96ebad01dba346ba12d8321e6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f8fda5bc6affc589c45004b29ba43902
Package / Case:	369f3769eeeca8edfced5aeea243bc44

In Stock: 3764

Stock:

3764 Can Ship Immediately