TSM061NA03CV RGG

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Mfr. #:

TSM061NA03CV RGG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 30V 66A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM061NA03CV RGG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM061NA03CV RGG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	89e21ae218cdda598eae2e85a8d1f8cd
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	ae3a2e0b9672cf9bea49caee112be29f
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	fd3b9960b1b3b76e4a5b875c2b1e8fc2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c2cd6761b8c546e8f32d1dcc7f1371db
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	36b7796958f37abca5cc58548a880bc7
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f8fda5bc6affc589c45004b29ba43902
Package / Case:	369f3769eeeca8edfced5aeea243bc44

In Stock: 0

Stock:

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