TSM089N08LCR RLG

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Mfr. #:

TSM089N08LCR RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 80V 67A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM089N08LCR RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM089N08LCR RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	8fb2d12659b7777579974d2248fa9f7d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	835b217387a1c82d0613856c3c2fe241
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	023f224d6b8afb36d9df8bc446b12e5a
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b24b8acebad00aecfbbee9bf9c1d58d0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 0

Stock:

0 Can Ship Immediately