TSM10NB60CI C0G

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Mfr. #:

TSM10NB60CI C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 10A ITO220AB

Упаковка:

Tube

Datasheet:

TSM10NB60CI C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM10NB60CI C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	4cbc835c709aa2e29cefbdf46fa4c9f1
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	96fa72e0653b7e243b9307d1f0873ca4
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	a197195bdbb874ed2eed155bdfe0bd4e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6