TSM120N10PQ56 RLG

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Mfr. #:

TSM120N10PQ56 RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 100V 58A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM120N10PQ56 RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM120N10PQ56 RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	036d2b0bba9e9111dfcfbe4715924567
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	b10fbeb2ad029420937e4ec1f9109d50
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	11f26196644dcfd31829d0d0b6efff3f
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	181f569749c2d1925567507c2edfeb68
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	27cc3bf8eca6e148f3a5d1e543db0f2e
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

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Stock:

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