TSM160N10LCR RLG

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See Product Specifications

Mfr. #:

TSM160N10LCR RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 100V 46A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM160N10LCR RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM160N10LCR RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	f75fbd98f26caf156e71f976ab32caa5
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	8d0d4a37427f18f1a0a85b4b35969a44
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	9e2fc6a2ac7bc26249b104db7389f1eb
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ef16049e75725b3ea70479ce27575ab8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 19953

Stock:

19953 Can Ship Immediately