TSM1NB60CW RPG

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Mfr. #:

TSM1NB60CW RPG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 600V 1A SOT223

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM1NB60CW RPG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM1NB60CW RPG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	5ec53c66a19049c976ca5e6f7214e587
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	a217ea393a1d813561f074a9525ed06e
Vgs(th) (Max) @ Id:	63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:	8ba572bf543f006113f198a5b03c8d9e
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	8f1e141bbe5a87f88bf73e72d371a7aa
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b86b12b79f51afab9655c8e34e6af46b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	560b42d335ed49abb01a005a967a12be
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b

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Stock:

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