TSM1NB60SCT A3G

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Mfr. #:

TSM1NB60SCT A3G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 500MA TO92

Упаковка:

Cut Tape (CT)

Datasheet:

TSM1NB60SCT A3G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM1NB60SCT A3G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Cut Tape (CT)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	89085c47c23b7d8da3c1676371a344dc
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	765e0b7859492568021ebb2fdb815912
Vgs(th) (Max) @ Id:	63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:	8ba572bf543f006113f198a5b03c8d9e
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	8f1e141bbe5a87f88bf73e72d371a7aa
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	380241922d5d52a7836817671258e4e5
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2f84ada388e0516613ee9bf116b4e076
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435