TSM2N7000KCT B0G

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Mfr. #:

TSM2N7000KCT B0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 60V 300MA TO92

Упаковка:

Box

Datasheet:

TSM2N7000KCT B0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM2N7000KCT B0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Box
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	d48ef8c0e68ee05316e2636b296ffa98
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	26d0ac3852be1b291b265cd62dd224ca
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	8a6d08115cadf26e5cc3ef256c5f8cf7
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9599881b19ba103e54af4d61275d0e39
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b3104a6309e04ab8c59e6631b08d0cfb
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2f84ada388e0516613ee9bf116b4e076
Package / Case:	eb14c87bf1665793a9b98abdb5766644

In Stock: 0

Stock:

0 Can Ship Immediately