TSM2NB65CH X0G

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See Product Specifications

Mfr. #:

TSM2NB65CH X0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 650V 2A TO251

Упаковка:

Tube

Datasheet:

TSM2NB65CH X0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM2NB65CH X0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	a94e61109c54813522be818a0ece14f0
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	4ffb2bec1b7c7b03479d2364675fec24
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	5a6fea380f602f17400f5e0524af2d43
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f4d25cd364c9c515635819aa015ce9e3
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	f05f3b828db9b3466aca24456db9c84e