TSM4N80CI C0G

TSM4N80CI C0G

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TSM4N80CI C0G
Описание:
MOSFET N-CH 800V 4A ITO220AB
Упаковка:
Tube
Datasheet:
TSM4N80CI C0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TSM4N80CI C0G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c58ad1174280150ed9c40f3f2ac6b907
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:98ef2da1baafb5a49764b283f3aaf805
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ea651d2bdfdc26c514ef075d17f84375
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:86d82bd3155c0131fae120cbf0f8aff6
In Stock: 0
Stock:
0 Can Ship Immediately
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