TSM4N80CZ C0G

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Mfr. #:

TSM4N80CZ C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 800V 4A TO220

Упаковка:

Tube

Datasheet:

TSM4N80CZ C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM4N80CZ C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c58ad1174280150ed9c40f3f2ac6b907
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	98ef2da1baafb5a49764b283f3aaf805
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ea651d2bdfdc26c514ef075d17f84375
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	21023271cb741070ebf3efcc38cc7f20
Package / Case:	46bb638de2ea693de650d7f1c3115468