TSM4N90CZ C0G

TSM4N90CZ C0G

Images are for reference only
See Product Specifications

TSM4N90CZ C0G
Описание:
MOSFET N-CHANNEL 900V 4A TO220
Упаковка:
Tube
Datasheet:
TSM4N90CZ C0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:TSM4N90CZ C0G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:796033f673241d39eb784d680e3b7cce
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:de0812168e822f1110815fd33f6452ea
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:98ef2da1baafb5a49764b283f3aaf805
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ea651d2bdfdc26c514ef075d17f84375
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 978
Stock:
978 Can Ship Immediately
  • Делиться:
Для использования с
IPP147N12N3GXKSA1
IPP147N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO220-3
HUFA75309T3ST
HUFA75309T3ST
Fairchild Semiconductor
MOSFET N-CH 55V 3A SOT223-4
BSC882N03LS G
BSC882N03LS G
Infineon Technologies
N-CHANNEL POWER MOSFET
BSC066N06NSATMA1
BSC066N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 64A TDSON-8-6
2N7000-D75Z
2N7000-D75Z
onsemi
MOSFET N-CH 60V 200MA TO92-3
SUP90100E-GE3
SUP90100E-GE3
Vishay Siliconix
N-CHANNEL 200 V (D-S) MOSFET TO-
IPB60R099C7ATMA1
IPB60R099C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 22A TO263-3
FCH22N60N
FCH22N60N
onsemi
MOSFET N-CH 600V 22A TO247-3
FQB4N90TM
FQB4N90TM
onsemi
MOSFET N-CH 900V 4.2A D2PAK
IXFV16N80P
IXFV16N80P
IXYS
MOSFET N-CH 800V 16A PLUS220
RJL5012DPE-00#J3
RJL5012DPE-00#J3
Renesas Electronics America Inc
MOSFET N-CH 500V 12A 4LDPAK
SISS5708DN-T1-GE3
SISS5708DN-T1-GE3
Vishay Siliconix
N-CHANNEL 150 V (D-S) MOSFET POW
Вас также может заинтересовать
P4KE18AHR1G
P4KE18AHR1G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 25.5VC DO204AL
P6KE47AHA0G
P6KE47AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 40.2VWM 64.8VC DO204AC
SA9.0CA B0G
SA9.0CA B0G
Taiwan Semiconductor Corporation
TVS DIODE 9VWM 15.4VC DO204AC
KBP103G C2G
KBP103G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 200V 1A KBP
6A100GH
6A100GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A R-6
SS23LHRHG
SS23LHRHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A SUB SMA
SK59BHR5G
SK59BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 5A DO214AA
SF66GHA0G
SF66GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A DO201AD
SRA1650HC0G
SRA1650HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 16A TO220AC
1SMB5945H
1SMB5945H
Taiwan Semiconductor Corporation
DIODE ZENER 68V 3W DO214AA
BZD27C12P MTG
BZD27C12P MTG
Taiwan Semiconductor Corporation
DIODE ZENER 12.05V 1W SUB SMA
TPC817S1B RAG
TPC817S1B RAG
Taiwan Semiconductor Corporation
OPTOISO 5KV TRANS 4SOP