TSM4NB60CH C5G

Images are for reference only
See Product Specifications

Mfr. #:

TSM4NB60CH C5G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 4A TO251

Упаковка:

Tube

Datasheet:

TSM4NB60CH C5G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM4NB60CH C5G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	886be622a0d781aa05813592d5e619cc
Vgs(th) (Max) @ Id:	63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:	cacaf6e2370296df565d5ad62dee01d0
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	037945a2b9fb15792c5c9d1421384b61
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	54e97b06ca67f0676121b669811db9d1