TSM4NB65CI C0G

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Mfr. #:

TSM4NB65CI C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 650V 4A ITO220AB

Упаковка:

Tube

Datasheet:

TSM4NB65CI C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM4NB65CI C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	3a96bd25a7f7c91f51bc4839d12fb234
Vgs(th) (Max) @ Id:	63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:	d652df7d8f916284ba71c1610fd17bce
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	bc5e5089750cf69e540f1bd1e279ece0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	892781207040d380cdc8b8f65d88b9e2
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6