TSM4ND60CI C0G

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Mfr. #:

TSM4ND60CI C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 4A ITO220

Упаковка:

Tube

Datasheet:

TSM4ND60CI C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM4ND60CI C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	ccbd814be8d73616679e7f5a64ce1cee
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	e49c1008ae7cc4ce135db4c7cdd3fcef
Vgs(th) (Max) @ Id:	49290fad653d58ec891aaab4b2c0f7cc
Gate Charge (Qg) (Max) @ Vgs:	da55571e76c0355ef9d50aca749998c0
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0e1cbede1ec7b0656f9ce59e380e750e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	932381e0af38e8bdcc6b8e8abc347734
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	4cc8888ef0f668f8b1f15fcfc0d5b888
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6

In Stock: 0

Stock:

0 Can Ship Immediately