TSM4ND65CI

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See Product Specifications

Mfr. #:

TSM4ND65CI

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 650V 4A ITO220

Упаковка:

Tube

Datasheet:

TSM4ND65CI Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM4ND65CI
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	058538c8d15c49d7784eb87ab2cb258e
Vgs(th) (Max) @ Id:	49290fad653d58ec891aaab4b2c0f7cc
Gate Charge (Qg) (Max) @ Vgs:	68844bb97bcab7ba3e7954b64f444cf5
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	bea877250f9a75b7b1d66455208ec853
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	932381e0af38e8bdcc6b8e8abc347734
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	4cc8888ef0f668f8b1f15fcfc0d5b888
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6