TSM600N25ECH C5G

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See Product Specifications

Mfr. #:

TSM600N25ECH C5G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 250V 8A TO251

Упаковка:

Tube

Datasheet:

TSM600N25ECH C5G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM600N25ECH C5G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:	c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	af1f54c43b36858d83fd76ec401281c1
Vgs(th) (Max) @ Id:	aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:	946cd4e16fbdadcfc0882ff21d635519
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	a30cc6d845ea0c447d1b00d26b2a4c23
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f19e87938fb156c3d22c87ecb200167e
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	54e97b06ca67f0676121b669811db9d1