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See Product Specifications
| номер части: | TSM60N600CI C0G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Taiwan Semiconductor Corporation |
| Упаковка: | Tube |
| Product Status: | a98c7ec8106cf16aced8afc464bc6bdf |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 9b63fe166715207d51445c226ada9c46 |
| Current - Continuous Drain (Id) @ 25°C: | c5fa82be9d4940e3e38692b9b3188d78 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | af1f54c43b36858d83fd76ec401281c1 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | 5a6fea380f602f17400f5e0524af2d43 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | d3e8c83fbb99e3807ed7572c24cc89e8 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 35e259c9e67ff8fd40b9e992f041f118 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 5efe0b9a12e1cf3c5988e9e6310d2c45 |
| Package / Case: | 86d82bd3155c0131fae120cbf0f8aff6 |
