TSM60N600CI C0G

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Mfr. #:

TSM60N600CI C0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 600V 8A ITO220AB

Упаковка:

Tube

Datasheet:

TSM60N600CI C0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM60N600CI C0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	a98c7ec8106cf16aced8afc464bc6bdf
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	af1f54c43b36858d83fd76ec401281c1
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	5a6fea380f602f17400f5e0524af2d43
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	d3e8c83fbb99e3807ed7572c24cc89e8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:	86d82bd3155c0131fae120cbf0f8aff6