TSM60NB099PW C1G

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See Product Specifications

Mfr. #:

TSM60NB099PW C1G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 600V 38A TO247

Упаковка:

Tube

Datasheet:

TSM60NB099PW C1G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM60NB099PW C1G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	c49c4c1f716ea830d7b05c0267da97a8
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	22b6c91bcecd8476d1526a25fd0db841
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	a65a653621dd95f8547d805115f985c8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	8183e9e8cfc2de06a0a36d6406499e2f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	f7be7629c522e97e51272b29288234eb
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40

In Stock: 2057

Stock:

2057 Can Ship Immediately