TSM60NB1R4CH C5G

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Mfr. #:

TSM60NB1R4CH C5G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 600V 3A TO251

Упаковка:

Tube

Datasheet:

TSM60NB1R4CH C5G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM60NB1R4CH C5G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	5aefdf0c5e5a333cb11cd5da4de8bcb6
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	ad4544f1e8a447dfef089738092a25e8
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	c3b7af398c3491c0f0c9145c5b46b447
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	28a1202df1a6bc0a4202a7a54382e6f2
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	54e97b06ca67f0676121b669811db9d1

In Stock: 0

Stock:

0 Can Ship Immediately