TSM60NB900CH C5G

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See Product Specifications

Mfr. #:

TSM60NB900CH C5G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 600V 4A TO251

Упаковка:

Tube

Datasheet:

TSM60NB900CH C5G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM60NB900CH C5G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	74f9abdbac0ca0e0b0f62517aa8d7428
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	6e8902b64998b51f9bc9ea5a47b74ef0
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	b50b31bd6a3feb7d28b6ac102a9fb065
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	424ea9531e54e6ba7fb9a43a7d094c5c
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	54e97b06ca67f0676121b669811db9d1

In Stock: 14043

Stock:

14043 Can Ship Immediately