TSM650P02CX RFG

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Mfr. #:

TSM650P02CX RFG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET P-CHANNEL 20V 4.1A SOT23

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM650P02CX RFG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM650P02CX RFG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	c94d653982be52e80718b3875fd56aee
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	fc7b7f1c603ce94d70709d95434842e8
Vgs(th) (Max) @ Id:	ca87f9064cd95fc0bb3d9137ab50b2aa
Gate Charge (Qg) (Max) @ Vgs:	bc9804165e3b66f78018b1f3eb2cc5f9
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	2c942e78e96622d4a9b5a8dffc40444c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	242a3061b7391907bb40a93cb5cee0ca
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:	51bf93173785f0f3fc2d8b70cf119689

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Stock:

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