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See Product Specifications
| номер части: | TSM80N1R2CH C5G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Taiwan Semiconductor Corporation |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | faca79d8bea430c6302af6f2e2f59d12 |
| Current - Continuous Drain (Id) @ 25°C: | 475c0d5bfc10f10e4b2ea82ed2ee93ec |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 1c4e77de590b78a30237ff944cea2df7 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | 4d0082435d61c23b9119aa73b27502d6 |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | af571adeee6dc6d689823d450d6e83d2 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 8e657a4c990a3d844f6ec86ca07d1393 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 154ac829cb79a640ad28b5fe821cdccf |
| Package / Case: | 54e97b06ca67f0676121b669811db9d1 |
