TSM850N06CX RFG

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See Product Specifications

Mfr. #:

TSM850N06CX RFG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 60V 3A SOT23

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM850N06CX RFG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM850N06CX RFG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	db85458bfb0c13a2fe3b5128c677d898
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	cd5b4d19c60f0a942c8da6b39ef675fa
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	068783ea259bcacf19f2e6d8a2f78cdc
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	36e637e343b05f017f917f16396eb51e
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:	51bf93173785f0f3fc2d8b70cf119689