TSM900N06CH X0G

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See Product Specifications

Mfr. #:

TSM900N06CH X0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CHANNEL 60V 11A TO251

Упаковка:

Tube

Datasheet:

TSM900N06CH X0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM900N06CH X0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	339da39144bec9f61f0945ae3ef8f55e
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	6c23119180c416a0feeadfcd682fa278
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	018bb83bdcefd9e979bac57c354c3457
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	e8e46a001b4c241b60d445c0dc26ad22
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	8205ca17d37170c3e6106db260b4f4b6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	f05f3b828db9b3466aca24456db9c84e