TSM900N10CH X0G

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See Product Specifications

Mfr. #:

TSM900N10CH X0G

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 100V 15A TO251

Упаковка:

Tube

Datasheet:

TSM900N10CH X0G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM900N10CH X0G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	34f27d027764756cd9f657d693b9fb9c
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	a2334d39666347e042317f5ee8ea1e22
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	018bb83bdcefd9e979bac57c354c3457
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4854aaf233baa6b9678a1e6bd679c4b5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	154ac829cb79a640ad28b5fe821cdccf
Package / Case:	f05f3b828db9b3466aca24456db9c84e