UG06BHA0G

UG06BHA0G

Images are for reference only
See Product Specifications

UG06BHA0G
Описание:
DIODE GEN PURP 100V 600MA TS-1
Упаковка:
Tape & Box (TB)
Datasheet:
UG06BHA0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UG06BHA0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Box (TB)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):a7ba2723f2ce3fb8673c85e5481e65d7
Voltage - Forward (Vf) (Max) @ If:8e90f87dd8cdc1d53749b6fbb574ede2
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):bbdf46395cf77c54128dd47fd615d204
Current - Reverse Leakage @ Vr:5b5b451822cc0173087babe6279facc7
Capacitance @ Vr, F:c8e6f070122b67d6190d47f3abb86967
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:ad5df1e4b1736e57107d275df31429ae
Supplier Device Package:f20caf052996a8b41bfc2baf54c04192
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SBR02M30LP-7
SBR02M30LP-7
Diodes Incorporated
DIODE SBR 30V 200MA 2DFN
1N6481-E3/96
1N6481-E3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
S2BHE3_A/H
S2BHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1.5A DO214AA
HS3G-K M6G
HS3G-K M6G
Taiwan Semiconductor Corporation
50NS, 3A, 400V, HIGH EFFICIENT R
S10CK-M3/I
S10CK-M3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A DO214AB
JANTX1N6074
JANTX1N6074
Microchip Technology
DIODE GEN PURP 100V 850MA AXIAL
R6010425XXYA
R6010425XXYA
Powerex Inc.
RECTIFIER STUD MOUNT REVERSE DO-
D2450N04TXPSA1
D2450N04TXPSA1
Infineon Technologies
DIODE GEN PURP 400V 2450A
GAS06520P
GAS06520P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
VSKE250-20
VSKE250-20
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 250A MAGNAPAK
MBRF7150 C0G
MBRF7150 C0G
Taiwan Semiconductor Corporation
DIODE SCHTKY 150V 7.5A ITO220AC
RF501B6STL
RF501B6STL
Rohm Semiconductor
DIODE GEN PURPOSE CPD
Вас также может заинтересовать
SMF7.5AHRVG
SMF7.5AHRVG
Taiwan Semiconductor Corporation
TVS DIODE 7.5VWM 12.9VC SOD123W
SMCJ24C M6
SMCJ24C M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
ABS15MH
ABS15MH
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 1.5A ABS
GBPC1506M T0G
GBPC1506M T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 15A GBPC-M
SR1690PTH
SR1690PTH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 16A 90V TO3P
LL5817 L0G
LL5817 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A MELF
MBRS10150HMNG
MBRS10150HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 10A TO263AB
HS1GL RQG
HS1GL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
S1DL R3G
S1DL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
SS22L RFG
SS22L RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A SUB SMA
SS315 R7
SS315 R7
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
1SMA5928H
1SMA5928H
Taiwan Semiconductor Corporation
DIODE ZENER 13V 1.5W DO214AC