UG54GHA0G

UG54GHA0G

Images are for reference only
See Product Specifications

UG54GHA0G
Описание:
DIODE GEN PURP 200V 5A DO201AD
Упаковка:
Tape & Box (TB)
Datasheet:
UG54GHA0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UG54GHA0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Box (TB)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):4dd8e57bba533ac70e32f1b72e65943c
Voltage - Forward (Vf) (Max) @ If:191dcd4f584819f10f74d570b9f824a8
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):7e5e01fa50973b448e8d4e03ef016cfc
Current - Reverse Leakage @ Vr:b74ef6fb4de700e3379a952a2fb629b3
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NXPSC04650B6J
NXPSC04650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 4A D2PAK
BAT81S-TR
BAT81S-TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 30MA DO35
DFLR1600Q-7
DFLR1600Q-7
Diodes Incorporated
SUPERFAST RECOVERY RECTIFIER PDI
SK53C
SK53C
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 30V DO-214AB
6A80GH
6A80GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 6A R-6
JAN1N5614US/TR
JAN1N5614US/TR
Microchip Technology
STD RECTIFIER
1N3624
1N3624
Microchip Technology
STD RECTIFIER
ES2FHE3/52T
ES2FHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 2A DO214AA
MSS1P2LHM3/89A
MSS1P2LHM3/89A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 1A 20V MICROSMP
MBRF2035HC0G
MBRF2035HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 35V 20A ITO220AC
SF44G B0G
SF44G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
EGP31B-E3/D
EGP31B-E3/D
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO201AD
Вас также может заинтересовать
P4SMA11AH
P4SMA11AH
Taiwan Semiconductor Corporation
TVS DIODE 9.4VWM 15.6VC DO214AC
SMCJ110CAH
SMCJ110CAH
Taiwan Semiconductor Corporation
TVS DIODE 110VWM 177VC DO214AB
1V5KE27CA
1V5KE27CA
Taiwan Semiconductor Corporation
TVS DIODE 23.1VWM 37.5VC DO201AD
1KSMB12CAHR5G
1KSMB12CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 10.2VWM 16.7VC DO214AA
SMAJ90A R3G
SMAJ90A R3G
Taiwan Semiconductor Corporation
TVS DIODE 90VWM 146VC DO214AC
SMCJ18AHR7G
SMCJ18AHR7G
Taiwan Semiconductor Corporation
TVS DIODE 18VWM 29.2VC DO214AB
1.5KE7.5CAHB0G
1.5KE7.5CAHB0G
Taiwan Semiconductor Corporation
TVS DIODE 6.4VWM 11.3VC DO201
SMCJ33CA M6
SMCJ33CA M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
SK55C R6
SK55C R6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
SFA1004G
SFA1004G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO220AC
1SMA4739HR3G
1SMA4739HR3G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 1.25W DO214AC
1SMA4746HR3G
1SMA4746HR3G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 1.25W DO214AC