CSD19538Q2T

CSD19538Q2T

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CSD19538Q2T
Описание:
MOSFET N-CH 100V 13.1A 6WSON
Упаковка:
Tape & Reel (TR)
Datasheet:
CSD19538Q2T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:CSD19538Q2T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Texas Instruments
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:cf6d50d0d35fe9cdb7c6657809613e73
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:84722296d35fa59b08824a583ed86fa0
Vgs(th) (Max) @ Id:49290fad653d58ec891aaab4b2c0f7cc
Gate Charge (Qg) (Max) @ Vgs:4b9ed0596102e57729e1049c7d2434b3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:99bba041ac3b6cfa712d4fac19a2c660
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c7f9454e70262b8f3fc598986b5cae10
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8d3a467aa077fbdf02e5236f1004446d
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 0
Stock:
0 Can Ship Immediately
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