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See Product Specifications
| номер части: | 2SA1943N(S1,E,S) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 192ea1990df41f495cec1f25a3ca9750 |
| Voltage - Collector Emitter Breakdown (Max): | 805b0aa5886f6ce11678c4a7200a8a0b |
| Vce Saturation (Max) @ Ib, Ic: | 9cc591ffea9d4bfc4403c613628b4909 |
| Current - Collector Cutoff (Max): | 87dc233f4865cfe479ff8c624df14793 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 02999fff0513e57835da57e6b5463fba |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 1f133dc7287aa3dab2380f8e98bca006 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a37ad9863329afbf5b7bab5645143153 |
| Supplier Device Package: | 802becb26be6cafacf181bb527af5311 |
