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See Product Specifications
| номер части: | 2SA965-O(TE6,F,M) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 6a9cc9d6e46dd6f45f7e1232f9252d5c |
| Voltage - Collector Emitter Breakdown (Max): | 53b3b1ea0de8e56a28871162445a88f6 |
| Vce Saturation (Max) @ Ib, Ic: | 3073bd8c62f6c7b39c6864f4657792a2 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 4cc5beaa5318f131afa95f4ab65d67c6 |
| Power - Max: | ce95244fd777c029cd7ce2060d88b39f |
| Frequency - Transition: | f5180f0d81e089faea7622ec0b7d7b0d |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | f7c8d4d17e5dc0b86a78dab297550bd9 |
