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| номер части: | 2SB906-Y(TE16L1,NQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | d5d5ab45ca68569cc2a705ef6b71ef92 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | ad5c4c0a054fc6ec074d47a669125fa0 |
| Current - Collector Cutoff (Max): | 172db04a50a1ace1828c4f7ae6dae515 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3f9208c9cfd9cc34cb44992bd4dc54c0 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | fcca63715662f37091f8a32b9fa11e58 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
| Supplier Device Package: | 13a5779ced06888106a2acdcd2b95b6f |