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See Product Specifications
| номер части: | 2SC2229(TE6SAN1F,M |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 4f2c7696497d474eaee0a6de96e028ad |
| Voltage - Collector Emitter Breakdown (Max): | f5857b5c2d0b94d156ab7cc94df182c6 |
| Vce Saturation (Max) @ Ib, Ic: | ac6feb3c2411c97cf3b717798161e2ee |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | cac8c79f35bbe1dcdd9eab98cc694483 |
| Power - Max: | 13e0d6d8a53be2aa25320ccd243d9bf9 |
| Frequency - Transition: | f5180f0d81e089faea7622ec0b7d7b0d |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | f7c8d4d17e5dc0b86a78dab297550bd9 |
