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номер части: | 2SC2229-Y(MIT,F,M) |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - Single |
Производитель: | Toshiba Semiconductor and Storage |
Упаковка: | Bulk |
Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
Current - Collector (Ic) (Max): | 4f2c7696497d474eaee0a6de96e028ad |
Voltage - Collector Emitter Breakdown (Max): | f5857b5c2d0b94d156ab7cc94df182c6 |
Vce Saturation (Max) @ Ib, Ic: | ac6feb3c2411c97cf3b717798161e2ee |
Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | cac8c79f35bbe1dcdd9eab98cc694483 |
Power - Max: | 13e0d6d8a53be2aa25320ccd243d9bf9 |
Frequency - Transition: | f5180f0d81e089faea7622ec0b7d7b0d |
Operating Temperature: | a05f788eae82918882d3b91ce435570b |
Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
Supplier Device Package: | f7c8d4d17e5dc0b86a78dab297550bd9 |