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See Product Specifications
| номер части: | 2SC3669-Y(T2OMI,FM |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 00d9f98efc560ef2b894fe86c875a453 |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | 4e9fa9473e6652a1333a8dbddfffe731 |
| Current - Collector Cutoff (Max): | edb6b56e8e88a4e081c3366a9258a9e6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 9bf263138506f98c69bbe22c704c6035 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | a1410f0eda5e0dfbb9eee0318523e0e1 |
| Supplier Device Package: | 9c9aff57f0603eade90da68257aa172d |
