2SJ360(F)

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See Product Specifications

Mfr. #:

2SJ360(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 60V 1A PW-MINI

Упаковка:

Bulk

Datasheet:

2SJ360(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SJ360(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	dc0f206ed7b4c3ce9f1955f392f5cd7e
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	56ab19ee64d27c04cd61ca780be63823
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	25109cf4b51d7d818b39d8f91da781b4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	9be79cc75480f14b1c50110791202233
Package / Case:	80047cf912aa748ae51ce6180b581cf9