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See Product Specifications
| номер части: | 2SJ360(F) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 45a48804a6be1a50f1da045aa07cbd8c |
| Drive Voltage (Max Rds On, Min Rds On): | f74f85d709bcbb2da5806f0ce2ab05c0 |
| Rds On (Max) @ Id, Vgs: | dc0f206ed7b4c3ce9f1955f392f5cd7e |
| Vgs(th) (Max) @ Id: | 25509f2d81b84ad0de9368a2b900ad19 |
| Gate Charge (Qg) (Max) @ Vgs: | 56ab19ee64d27c04cd61ca780be63823 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 25109cf4b51d7d818b39d8f91da781b4 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ae2350350ba6e5a69d2dc91b08eae7b5 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 9be79cc75480f14b1c50110791202233 |
| Package / Case: | 80047cf912aa748ae51ce6180b581cf9 |
