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See Product Specifications
| номер части: | 2SJ610(TE16L1,NQ) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | c5cbb7b66561ae3dbbdcebae7b0fa3f9 |
| Current - Continuous Drain (Id) @ 25°C: | 49be2d3befbb5f287b3239b421243897 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | e562a9bb249b46756f23698ba41a36f9 |
| Vgs(th) (Max) @ Id: | 92e41164c30579f3defe30c91bbd1c8d |
| Gate Charge (Qg) (Max) @ Vgs: | adefe80c4a89824fe268dd1bd0082a35 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 8fe9b0c2a914eb0ece7c151a691f0320 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | c91436d207e6992225a649cdcfea6f7c |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 13a5779ced06888106a2acdcd2b95b6f |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
