2SJ681(Q)

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See Product Specifications

Mfr. #:

2SJ681(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 60V 5A PW-MOLD2

Упаковка:

Bulk

Datasheet:

2SJ681(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SJ681(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	d59d0f233fe79879c037a2476500de6f
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	a6f1a061d42140d9ebe0c5ce6e356ab6
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	24d98632913ac255605ed1e0e3f65dae
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c91436d207e6992225a649cdcfea6f7c
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	7be745d195abbcb02fb906e1493a63a9
Package / Case:	f05f3b828db9b3466aca24456db9c84e