2SK209-GR(TE85L,F)

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See Product Specifications

Mfr. #:

2SK209-GR(TE85L,F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

TRANS SJT N-CH 10MA SC59

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK209-GR(TE85L,F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK209-GR(TE85L,F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:	f99a3691d50c56db84cad1c37011fa60
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	16f4ac0ea9daa12645266fa6c72d9ec6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b076f3636e454aebe9bc375302480bb7
Operating Temperature:	6113e5feb3ae4604db55235011ca6e99
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	d2bf94372df83e5aa092ca0328a62688
Package / Case:	51bf93173785f0f3fc2d8b70cf119689