2SK2866(F)

Images are for reference only
See Product Specifications

Mfr. #:

2SK2866(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 10A TO220AB

Упаковка:

Bulk

Datasheet:

2SK2866(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2866(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	96fa72e0653b7e243b9307d1f0873ca4
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	0f6138812f9ed4814918fa97e4fa176e
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	664a2aea929edb63e64ba562f07714a1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9b3b590b14408ced9e56cc56696084a1
Package / Case:	46bb638de2ea693de650d7f1c3115468