2SK2917(F)

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Mfr. #:

2SK2917(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 500V 18A TO3PIS

Упаковка:

Tube

Datasheet:

2SK2917(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK2917(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	53acc560d6ddad5708f13429566dcdb7
Current - Continuous Drain (Id) @ 25°C:	66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	90c639718c69db5929c29af9e1bb44d1
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	92c10d9198fcdfeb3996f06b53375ee7
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	1f038b9dddbcadcfaa25a1a2159eb96e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b5ec22b044b4f3beee50a26e79074bf6
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	70f4139c3ef3edb28e2e98bcdd3ba8b1
Package / Case:	a37ad9863329afbf5b7bab5645143153

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Stock:

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