2SK3462(TE16L1,NQ)

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See Product Specifications

Mfr. #:

2SK3462(TE16L1,NQ)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 250V 3A PW-MOLD

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK3462(TE16L1,NQ) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3462(TE16L1,NQ)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	c5cbb7b66561ae3dbbdcebae7b0fa3f9
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	87b6074ea3ec4cd6f5155eaaf2e22180
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	db83709cc1aa640e30cdddd177064057
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	40ebdac436208ecc32f4aeb6e04d0f10
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	30f9b88fd4b4cd0c45fa6701c81d377a
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	13a5779ced06888106a2acdcd2b95b6f
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95