2SK3565(Q,M)

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See Product Specifications

Mfr. #:

2SK3565(Q,M)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 900V 5A TO220SIS

Упаковка:

Bulk

Datasheet:

2SK3565(Q,M) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3565(Q,M)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	d59d0f233fe79879c037a2476500de6f
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	0baba282dad5627932c592b605ca0cf0
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	bc6ff13a46b13779fa5c2c7eaad150e9
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	ba14ec3b98ec5ed363cc23821c475aad
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	880570d04bb0963921348c898552e59a
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e75deed210709724cc39b7c90f58dad6
Package / Case:	a02e0d1a928de3366340ceae094aecd8