2SK3662(F)

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Mfr. #:

2SK3662(F)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 35A TO220NIS

Упаковка:

Bulk

Datasheet:

2SK3662(F) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3662(F)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	3ae79fae666fbc50d5011ee35b33c896
Drive Voltage (Max Rds On, Min Rds On):	f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:	76e60dadb60353f2e7608275cb7765c6
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	6756e6e5d12d7ab8877b1efbaa341905
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	365400dbc1c3696253e05487681c7327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	71fbc5583c0ebd33de81061dc2390256
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2dd8b787e28aa6ef43cc949cca56403f
Package / Case:	a02e0d1a928de3366340ceae094aecd8