2SK3906(Q)

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See Product Specifications

Mfr. #:

2SK3906(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 20A TO3P

Упаковка:

Bulk

Datasheet:

2SK3906(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3906(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	f3e50bda5dae0c1bd85e045d04d7383d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	e8ac7727426b0073c5b3747ea8636f0c
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	89853fdd6ed2eb1978d2d551614252a1
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	9a4f1935c47b20d6ecfefa74720836e6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3b4979fdef3ecbb1da8880119fdf6552
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153