BAS316,H3F

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Mfr. #:

BAS316,H3F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

DIODE GEN PURP 100V 250MA USC

Упаковка:

Tape & Reel (TR)

Datasheet:

BAS316,H3F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BAS316,H3F
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - Rectifiers - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:	eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):	1694085494e6ba5276d39d8d0d7aba9b
Voltage - Forward (Vf) (Max) @ If:	ab79aafa3ed265e5c7f3b3c0b1911b62
Speed:	cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):	34a5528c54ab58a2a5baa69ed110a4c9
Current - Reverse Leakage @ Vr:	419b4d432104155225c04023a245513a
Capacitance @ Vr, F:	26ce3a998c721f0130ed5a186892f67f
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	594efb3b909621d972aed824ffd1e1cf
Supplier Device Package:	09ce7b3a93023a7dbacbb6cf01dd494b
Operating Temperature - Junction:	ec39a346a2f7ee86733e1a9fa32a3987

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Stock:

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