GT10J312(Q)

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See Product Specifications

Mfr. #:

GT10J312(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 600V 10A 60W TO220SM

Упаковка:

Tube

Datasheet:

GT10J312(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT10J312(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):	46f85f4ab5977146b21c80a7ef961080
Current - Collector Pulsed (Icm):	ace78b86334ed64201bccb73e319b975
Vce(on) (Max) @ Vge, Ic:	5e8eb53c7e75ad48d964ef63a8df6b63
Power - Max:	df2b056117eee96cb647c2a508507eed
Switching Energy:	336d5ebc5436534e61d16e63ddfca327
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	b46d66fb2c426cfbec5a6e2733e113e6
Test Condition:	ae86e52551e19610ba1bb249fd4be8f5
Reverse Recovery Time (trr):	aaab207b8e6bc6eec210bb10f494acf5
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:	c3c9f787be34dc1ee9e22c730142772b