GT50J121(Q)

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See Product Specifications

Mfr. #:

GT50J121(Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

IGBT 600V 50A 240W TO3P LH

Упаковка:

Tube

Datasheet:

GT50J121(Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT50J121(Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):	80048aebe005b9413929a11bba83f563
Current - Collector Pulsed (Icm):	922dea8deaffd5956749f30180649e0e
Vce(on) (Max) @ Vge, Ic:	f9ac2b44109713eae8d1d186323f782f
Power - Max:	27a4d839d19f888067fbc338f96d11da
Switching Energy:	5d335ebaa75d9e969165764f1fd8ff7f
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:	212c6610836631ce77e729b4edba6c18
Test Condition:	d23e567d67889ad591b26beca442d245
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	3d6f2d462c99f772438dca830bcf3379
Supplier Device Package:	a3aa892f433f4bb7c3a28dc838bf6856

In Stock: 0

Stock:

0 Can Ship Immediately