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See Product Specifications
| номер части: | GT50J121(Q) |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - IGBTs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| IGBT Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Voltage - Collector Emitter Breakdown (Max): | 9b63fe166715207d51445c226ada9c46 |
| Current - Collector (Ic) (Max): | 80048aebe005b9413929a11bba83f563 |
| Current - Collector Pulsed (Icm): | 922dea8deaffd5956749f30180649e0e |
| Vce(on) (Max) @ Vge, Ic: | f9ac2b44109713eae8d1d186323f782f |
| Power - Max: | 27a4d839d19f888067fbc338f96d11da |
| Switching Energy: | 5d335ebaa75d9e969165764f1fd8ff7f |
| Input Type: | eb6d8ae6f20283755b339c0dc273988b |
| Gate Charge: | 336d5ebc5436534e61d16e63ddfca327 |
| Td (on/off) @ 25°C: | 212c6610836631ce77e729b4edba6c18 |
| Test Condition: | d23e567d67889ad591b26beca442d245 |
| Reverse Recovery Time (trr): | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 3d6f2d462c99f772438dca830bcf3379 |
| Supplier Device Package: | a3aa892f433f4bb7c3a28dc838bf6856 |
